Anomalous effects in electrical latch-up characteristics have been identified both in the d.c. (hysteresis effects) and a.c. (window effects) characteristics of a large sample of commercial CMOS ICs of different suppliers and technologies. Both d.c. and a.c. effects were always present in all tested devices which showed anomalies. Infra-red microscopy and scanning laser microscopy reveal that both effects are caused by current redistribution between different latch-up paths and are therefore correlated

Analysis of d.c. and a.c. anomalous latch-up effects in commercial CMOS integrated circuits

ZANONI, ENRICO;SPIAZZI, GIORGIO;
1991

Abstract

Anomalous effects in electrical latch-up characteristics have been identified both in the d.c. (hysteresis effects) and a.c. (window effects) characteristics of a large sample of commercial CMOS ICs of different suppliers and technologies. Both d.c. and a.c. effects were always present in all tested devices which showed anomalies. Infra-red microscopy and scanning laser microscopy reveal that both effects are caused by current redistribution between different latch-up paths and are therefore correlated
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2517090
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