Degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts was observed for thermal treatments at 500–550°C. The barrier height decreases from 0.86 to about 0.60 V and then rises to 0.70 V. A striking correlation between metallurgical interdiffusion, growth of intermetallic compounds and electrical degradation is reported.
Electrical degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts induced by thermal treatments
ZANONI, ENRICO
1982
Abstract
Degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts was observed for thermal treatments at 500–550°C. The barrier height decreases from 0.86 to about 0.60 V and then rises to 0.70 V. A striking correlation between metallurgical interdiffusion, growth of intermetallic compounds and electrical degradation is reported.File in questo prodotto:
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