Degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts was observed for thermal treatments at 500–550°C. The barrier height decreases from 0.86 to about 0.60 V and then rises to 0.70 V. A striking correlation between metallurgical interdiffusion, growth of intermetallic compounds and electrical degradation is reported.

Electrical degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts induced by thermal treatments

ZANONI, ENRICO
1982

Abstract

Degradation of n-Si/PtSi/(Ti-W)/Al Schottky contacts was observed for thermal treatments at 500–550°C. The barrier height decreases from 0.86 to about 0.60 V and then rises to 0.70 V. A striking correlation between metallurgical interdiffusion, growth of intermetallic compounds and electrical degradation is reported.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2518049
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