Impact-ionization phenomena have been studied in InAlAs/InGaAs HEMT's on InP-substrates by means of DC measurements and of a 2D hydrodynamic simulator. An anomalous double bell-shaped curve behaviour of the gate current as a function of Vgs has been found and attributed to a widening of the gate-drain high electric field region on increasing Vgs beyond 0 V. We correlate impactionization features with light emission in the 1.1÷3.2 eV energy range.
Anomalous impact-ionization gate current in high breakdown InP-based HEMT's
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
1996
Abstract
Impact-ionization phenomena have been studied in InAlAs/InGaAs HEMT's on InP-substrates by means of DC measurements and of a 2D hydrodynamic simulator. An anomalous double bell-shaped curve behaviour of the gate current as a function of Vgs has been found and attributed to a widening of the gate-drain high electric field region on increasing Vgs beyond 0 V. We correlate impactionization features with light emission in the 1.1÷3.2 eV energy range.File in questo prodotto:
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