AlGaAs/InGaAs PM-HEMT's DC behaviour has been investigated at low temperature. Depending on the bias conditions a remarkable collapse of the drain current, ID, or a considerable shift in the threshold voltage VT have been observed. A complete recovery of the I-V curve has been observed at high values of the applied bias. Trapping and detrapping (by impact ionization) of electrons in deep levels present in the gate-to-drain region and under the gate are responsible for the observed behaviour.

Study of Low-Temperature Degradation of AlGaAs/InGaAs Pseudomorphic HEMT’s

MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO;
1995

Abstract

AlGaAs/InGaAs PM-HEMT's DC behaviour has been investigated at low temperature. Depending on the bias conditions a remarkable collapse of the drain current, ID, or a considerable shift in the threshold voltage VT have been observed. A complete recovery of the I-V curve has been observed at high values of the applied bias. Trapping and detrapping (by impact ionization) of electrons in deep levels present in the gate-to-drain region and under the gate are responsible for the observed behaviour.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2521081
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