A new SPICE model of the bipolar transistor including avalanche multiplication and current crowding effects is described. Impact-ionization phenomena are modelled refering to a physical description of impact-ionization coefficients, rather than to semi-empirical laws, as in previous models. We show that an accurate analysis of multiplication effects can be obtained only if the influence of impact-ionization on current crowding and parasitic base resistance RB is included in the model and described exactly. The model also allows one to easily include high injection effects, which are important for the evaluation of breakdown voltage at high IE.

A physics-based, accurate spice model of impact-ionization effects in bipolar transistors

ZANONI, ENRICO;MENEGHESSO, GAUDENZIO;
1994

Abstract

A new SPICE model of the bipolar transistor including avalanche multiplication and current crowding effects is described. Impact-ionization phenomena are modelled refering to a physical description of impact-ionization coefficients, rather than to semi-empirical laws, as in previous models. We show that an accurate analysis of multiplication effects can be obtained only if the influence of impact-ionization on current crowding and parasitic base resistance RB is included in the model and described exactly. The model also allows one to easily include high injection effects, which are important for the evaluation of breakdown voltage at high IE.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2522044
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? ND
social impact