Mastering hot-electron phenomena is of crucial importance for the design of power AlGaAs/InGaAs pseudomorphic HEMT's. Highly energetic carriers are responsible for on-state device breakdown, which can limit the microwave power of HEMT's. They can induce recoverable drift phenomena deriving from the trapping/detrapping of hot-electrons, and/or from the recombination of holes generated by impact-ionization with electron trapped in deep levels. In the worst case, they can also induce permanent reliability problems, mostly consisting in the formation of defects or in the breaking of atomic bonds, which result in the generation of deep levels. Spectroscopic analysis of electroluminescence (EL) has been extensively used to characterize hot carrier effects in MESFET's and HEMT's.

Electroluminescence analysis of multiplication effects in pseudomorphic HEMT’s

MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
1998

Abstract

Mastering hot-electron phenomena is of crucial importance for the design of power AlGaAs/InGaAs pseudomorphic HEMT's. Highly energetic carriers are responsible for on-state device breakdown, which can limit the microwave power of HEMT's. They can induce recoverable drift phenomena deriving from the trapping/detrapping of hot-electrons, and/or from the recombination of holes generated by impact-ionization with electron trapped in deep levels. In the worst case, they can also induce permanent reliability problems, mostly consisting in the formation of defects or in the breaking of atomic bonds, which result in the generation of deep levels. Spectroscopic analysis of electroluminescence (EL) has been extensively used to characterize hot carrier effects in MESFET's and HEMT's.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2523034
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