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EnglishB diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge. We find two distinct self-interstitial forms—a simple one with low entropy and a complex one with entropy 30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket—we name it a morph. Computational modeling suggests that morphs exist in both self-interstitial and vacancylike forms, and are crucial for diffusion and defect dynamics in Ge, Si, and probably many other crystalline solids.
| Titolo: | Extended Point Defects in Crystalline Materials: Ge and Si |
| Autori: | |
| Data di pubblicazione: | 2013 |
| Rivista: | |
| Abstract: | B diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge. We find two distinct self-interstitial forms—a simple one with low entropy and a complex one with entropy 30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket—we name it a morph. Computational modeling suggests that morphs exist in both self-interstitial and vacancylike forms, and are crucial for diffusion and defect dynamics in Ge, Si, and probably many other crystalline solids. |
| Handle: | http://hdl.handle.net/11577/2678459 |
| Appare nelle tipologie: | 01.01 - Articolo in rivista |
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