Experimental Technique for Traps Spatial Localization in GaN HEMTs

Being able to spatially localize trapping phenomena that are limiting GaN HEMTs operation is a mandatory task in order to successfully improve their performances. In this work it will be shown that a simple technique based on the measurements of the drain current dispersion under pulsed operation can be successfully used in order to localize buffer or surface/barrier traps states. A physical explanation supporting the experimental results as well as 2D numerical simulations will also be presented.