We investigate the effects of X-ray exposure in 41-nm single level NAND Flash memories at small doses, comparable to those used in printed circuit board inspections. We analyze both short-term effects, such as cell threshold voltage shifts during irradiation, and retention and endurance performance of devices exposed to x rays. For doses smaller than 1krad(Si), no effect is observed. At higher doses, charge loss is observed after the exposure and a modest read margin degradation is seen during high-temperature retention tests.

A Study on the Short- and Long-Term Effects of X-Ray Exposure on NAND Flash Memories

GERARDIN, SIMONE;BAGATIN, MARTA;PACCAGNELLA, ALESSANDRO;
2011

Abstract

We investigate the effects of X-ray exposure in 41-nm single level NAND Flash memories at small doses, comparable to those used in printed circuit board inspections. We analyze both short-term effects, such as cell threshold voltage shifts during irradiation, and retention and endurance performance of devices exposed to x rays. For doses smaller than 1krad(Si), no effect is observed. At higher doses, charge loss is observed after the exposure and a modest read margin degradation is seen during high-temperature retention tests.
2011
2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2963299
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 4
social impact