This paper describes a SRAM designed for space and nuclear physics applications. The device has been designed in a commercial 180 nm CMOS technology using RHBD techniques. Measurement on prototype samples under radiation demonstrate immunity to total dose and latch-up, and an adequate level of hardness with respect to single event effects.
A Multi-Megarad, Radiation Hardened by Design 512 kbit SRAM in CMOS Technology
BAGATIN, MARTA;GERARDIN, SIMONE;PACCAGNELLA, ALESSANDRO
2010
Abstract
This paper describes a SRAM designed for space and nuclear physics applications. The device has been designed in a commercial 180 nm CMOS technology using RHBD techniques. Measurement on prototype samples under radiation demonstrate immunity to total dose and latch-up, and an adequate level of hardness with respect to single event effects.File in questo prodotto:
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