The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation-induced degradation in threshold voltage shift and interface traps accumulation.

Effects of electrical stress and ionizing radiation on Si-based TFETs

GERARDIN, SIMONE;PACCAGNELLA, ALESSANDRO;BAGATIN, MARTA;
2015

Abstract

The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation-induced degradation in threshold voltage shift and interface traps accumulation.
2015
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
9781479969111
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3148622
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