Effects of bias on the radiation responses of Si-based TFETs

The paper reports the radiation response of TFETs due to the gate oxide and BOX separately, by means of the introduction of three setups of bias during irradiation. The dependency of shift of the threshold voltage due to the interface traps and shifts of the characteristics on bias during irradiation is investigated. Due to the particular doping structures of TFETs, the holes trapping in BOX is mainly induced under the P+ source region rather under the channel, which is inclined to induce the increase of the threshold voltage and the voltage at which band-to-band tunneling occurs. Under this circumstance, the degradation under unbiased case is even worse than under ON biased situation.