The process of damage accumulation in In implanted Si by transmission electron microscopy (XTEM) and Rutherford backscattering channeling (RBSC), while secondary ion mass spectroscopy (SIMS) is used for measuring as-implanted distribution profiles. The objective is to determine suitable parameters for predictive simulation of In implantation in Si by the Monte Carlo binary collision approximation (MC-BCA). This paper discusses some issues concerning the interpretation of structural measurements in ion implanted Si.
Structural characterization and modeling of damage accumulation in In implanted Si
Napolitani E.
2004
Abstract
The process of damage accumulation in In implanted Si by transmission electron microscopy (XTEM) and Rutherford backscattering channeling (RBSC), while secondary ion mass spectroscopy (SIMS) is used for measuring as-implanted distribution profiles. The objective is to determine suitable parameters for predictive simulation of In implantation in Si by the Monte Carlo binary collision approximation (MC-BCA). This paper discusses some issues concerning the interpretation of structural measurements in ion implanted Si.File in questo prodotto:
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