Nitrogen implants were performed in Si wafers of variable purity, i.e., epitaxial layers, float zone, and Czochralski silicon (CZ-Si). The diffusion behavior of nitrogen reported by Hockett in Appl. Phys. Lett., 54. 1793 (1989), where nitrogen diffuses for several micrometers at temperatures as low as 750°C and the profiles assume a "double-peak" structure, is peculiar of CZ-Si. In contrast, in pure epitaxial-Si, nitrogen is immobile at low temperature but, at a higher temperature (850°C), the broadening of the nitrogen profile never assumes the shape observed in CZ-Si. Our results suggest that oxygen determines the shape of the nitrogen diffusion profiles. © 2004 The Electrochemical Society. All rights reserved.
Effect of oxygen on the diffusion of nitrogen implanted in silicon
Napolitani E.;
2004
Abstract
Nitrogen implants were performed in Si wafers of variable purity, i.e., epitaxial layers, float zone, and Czochralski silicon (CZ-Si). The diffusion behavior of nitrogen reported by Hockett in Appl. Phys. Lett., 54. 1793 (1989), where nitrogen diffuses for several micrometers at temperatures as low as 750°C and the profiles assume a "double-peak" structure, is peculiar of CZ-Si. In contrast, in pure epitaxial-Si, nitrogen is immobile at low temperature but, at a higher temperature (850°C), the broadening of the nitrogen profile never assumes the shape observed in CZ-Si. Our results suggest that oxygen determines the shape of the nitrogen diffusion profiles. © 2004 The Electrochemical Society. All rights reserved.Pubblicazioni consigliate
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