We report on the measurement of the optical absorption of bulk crystalline silicon at 1550 nm. Using the photodeflection technique, absorption as low as 5 ppm/cm has been measured on a sample with a resistivity of 10 kΩ · cm. The absorption as a function of the resistivity has been derived for n-type silicon. © 2013 Optical Society of America.

Bulk optical absorption of high resistivity silicon at 1550 nm

Cagnoli G.
2013

Abstract

We report on the measurement of the optical absorption of bulk crystalline silicon at 1550 nm. Using the photodeflection technique, absorption as low as 5 ppm/cm has been measured on a sample with a resistivity of 10 kΩ · cm. The absorption as a function of the resistivity has been derived for n-type silicon. © 2013 Optical Society of America.
2013
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3578058
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