statistiche ricercatore

Nome	#
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability	121
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects	107
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components	98
Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes	77
Degradation of InGaN-based LEDs related to charge diffusion and build-up	74
Thermal droop in InGaN-based LEDs: Physical origin and dependence on material properties	71
Role of defects in the thermal droop of InGaN-based light emitting diodes	67
Non radiative losses and degradation in InGaN-based LEDs	53
SRH non-radiative recombination in GaN-based LEDs: a study based on lifetime and DLTS measurements	45
Thermal droop in InGaN-based LEDs: an analysis based on temperature-dependent L-I characterization	42
Defect-Related Processes and their Influence on the Efficiency and Degradation of InGaN-Based Leds	38
Investigation of the thermal droop in InGaN-layers and blue LEDs	28
Analysis of the deep levels related to non-radiative recombination in GaN-on-Si LEDs: a study based on deep level transient spectroscopy	19
Totale	840

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2018/2019	48	0	0	0	0	0	0	0	0	0	0	28	20
2019/2020	163	23	7	0	7	17	12	13	16	14	41	10	3
2020/2021	91	2	12	0	7	4	3	2	7	7	8	6	33
2021/2022	144	15	26	6	9	2	6	11	9	4	7	6	43
2022/2023	120	22	5	0	16	26	15	0	9	16	0	9	2
2023/2024	53	2	6	6	10	4	2	0	13	4	6	0	0
Totale													840