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EnglishThis paper reviews the properties of the defects which limit the performance and the reliability of LEDs based on InGaN. More specifically we discuss: (i) the origin and properties of the defects responsible for SRH recombination; (ii) the role of defects in favoring the degradation of InGaN-based LEDs. Original data are compared to previous literature reports to provide a clear understanding of the topic.
| Titolo: | Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability | |
| Autori: | ||
| Data di pubblicazione: | 2015 | |
| Abstract: | This paper reviews the properties of the defects which limit the performance and the reliability of LEDs based on InGaN. More specifically we discuss: (i) the origin and properties of the defects responsible for SRH recombination; (ii) the role of defects in favoring the degradation of InGaN-based LEDs. Original data are compared to previous literature reports to provide a clear understanding of the topic. | |
| Handle: | http://hdl.handle.net/11577/3184878 | |
| ISBN: | 978-1-62841-473-8 | |
| Appare nelle tipologie: | 04.01 - Contributo in atti di convegno |
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