This paper reviews the properties of the defects which limit the performance and the reliability of LEDs based on InGaN. More specifically we discuss: (i) the origin and properties of the defects responsible for SRH recombination; (ii) the role of defects in favoring the degradation of InGaN-based LEDs. Original data are compared to previous literature reports to provide a clear understanding of the topic.
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability
MENEGHINI, MATTEO;DE SANTI, CARLO;LA GRASSA, MARCO;TRIVELLIN, NICOLA;BARBISAN, DIEGO;FERRETTI, MARCO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2015
Abstract
This paper reviews the properties of the defects which limit the performance and the reliability of LEDs based on InGaN. More specifically we discuss: (i) the origin and properties of the defects responsible for SRH recombination; (ii) the role of defects in favoring the degradation of InGaN-based LEDs. Original data are compared to previous literature reports to provide a clear understanding of the topic.File in questo prodotto:
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