statistiche ricercatore

Nome	#
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons	181
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications	125
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments	95
65 nm technology for HEP: Status and perspective	91
Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs	85
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs	82
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC	80
Radiation vulnerability in 65 nm CMOS I/O transistors after exposure to grad dose	79
Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose	74
Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors	57
Investigation of hot carrier stress and constant voltage stress in high-k Si-based TFETs	48
RD53 pixel chips for the ATLAS and CMS Phase-2 upgrades at HL-LHC	31
Totale	1.028

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2019/2020	33	0	0	0	0	0	0	0	0	0	17	13	3
2020/2021	116	6	4	9	9	0	8	1	10	25	11	22	11
2021/2022	169	10	35	15	3	14	3	16	25	2	2	13	31
2022/2023	46	17	2	0	2	4	4	0	2	7	0	7	1
2023/2024	65	2	5	13	8	3	13	0	1	0	9	5	6
2024/2025	145	0	4	3	13	36	13	12	32	24	8	0	0
Totale													1.028