BOITO, MIRCO
 Distribuzione geografica
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Continente #
NA - Nord America 843
AS - Asia 769
EU - Europa 409
AF - Africa 123
SA - Sud America 115
Continente sconosciuto - Info sul continente non disponibili 21
OC - Oceania 10
Totale 2.290
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Nazione #
US - Stati Uniti d'America 744
VN - Vietnam 216
IT - Italia 212
SG - Singapore 162
CN - Cina 139
BR - Brasile 77
BD - Bangladesh 51
HK - Hong Kong 44
CA - Canada 35
IN - India 34
FR - Francia 28
TW - Taiwan 19
GB - Regno Unito 17
PL - Polonia 17
BJ - Benin 13
JP - Giappone 11
AR - Argentina 10
BE - Belgio 10
DE - Germania 10
NL - Olanda 10
SE - Svezia 10
AT - Austria 9
FI - Finlandia 9
ES - Italia 8
HN - Honduras 8
MX - Messico 8
CO - Colombia 7
ID - Indonesia 7
SN - Senegal 7
TJ - Tagikistan 7
TR - Turchia 7
UZ - Uzbekistan 7
GA - Gabon 6
IE - Irlanda 6
IQ - Iraq 6
JM - Giamaica 6
PH - Filippine 6
SA - Arabia Saudita 6
CR - Costa Rica 5
ET - Etiopia 5
GH - Ghana 5
GN - Guinea 5
GR - Grecia 5
KR - Corea 5
MN - Mongolia 5
PK - Pakistan 5
PY - Paraguay 5
RU - Federazione Russa 5
SC - Seychelles 5
TN - Tunisia 5
ZA - Sudafrica 5
BA - Bosnia-Erzegovina 4
BS - Bahamas 4
CI - Costa d'Avorio 4
CL - Cile 4
CZ - Repubblica Ceca 4
DZ - Algeria 4
EC - Ecuador 4
MR - Mauritania 4
NC - Nuova Caledonia 4
NI - Nicaragua 4
RS - Serbia 4
SI - Slovenia 4
UA - Ucraina 4
XK - ???statistics.table.value.countryCode.XK??? 4
ZW - Zimbabwe 4
AO - Angola 3
BB - Barbados 3
BF - Burkina Faso 3
BW - Botswana 3
BY - Bielorussia 3
BZ - Belize 3
CW - ???statistics.table.value.countryCode.CW??? 3
DK - Danimarca 3
DM - Dominica 3
GP - Guadalupe 3
IR - Iran 3
IS - Islanda 3
LB - Libano 3
LU - Lussemburgo 3
LV - Lettonia 3
MA - Marocco 3
ME - Montenegro 3
MU - Mauritius 3
NE - Niger 3
PA - Panama 3
PR - Porto Rico 3
PT - Portogallo 3
RW - Ruanda 3
SO - Somalia 3
UG - Uganda 3
UY - Uruguay 3
AU - Australia 2
AZ - Azerbaigian 2
BO - Bolivia 2
CG - Congo 2
CH - Svizzera 2
CU - Cuba 2
DO - Repubblica Dominicana 2
EG - Egitto 2
Totale 2.208
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Città #
San Jose 113
Singapore 94
Ashburn 89
Los Angeles 66
Ho Chi Minh City 64
Hanoi 45
Padua 45
Hong Kong 36
Santa Clara 35
Chicago 33
Council Bluffs 26
Beijing 25
New York 21
Padova 21
Ravenna 20
Da Nang 17
Milan 15
Salt Lake City 15
Dallas 14
Cotonou 13
Haiphong 12
Phoenix 12
Bengaluru 11
Hsinchu 11
Orem 11
Montreal 10
Tampa 10
Lauterbourg 9
São Paulo 9
Vicenza 9
Bytom 8
Buffalo 7
Dakar 7
Dushanbe 7
Verona 7
Denver 6
Libreville 6
London 6
Redondo Beach 6
Tashkent 6
Vienna 6
Warsaw 6
Accra 5
Amsterdam 5
Atlanta 5
Conakry 5
Elk Grove Village 5
Hefei 5
Munich 5
Rome 5
San Francisco 5
Tokyo 5
Turku 5
Ulan Bator 5
Versailles 5
Addis Ababa 4
Belgrade 4
Biên Hòa 4
Boardman 4
Brussels 4
Chennai 4
Dublin 4
Frankfurt am Main 4
Guangzhou 4
Hai Bà Trưng 4
Harare 4
Hải Dương 4
Johannesburg 4
Kansas City 4
Las Vegas 4
Managua 4
Mexico City 4
Miami 4
Nha Trang 4
Nouakchott 4
Phủ Lý 4
Poplar 4
Pristina 4
Quảng Ngãi 4
Rio de Janeiro 4
San José 4
Stockholm 4
Toronto 4
Trebaseleghe 4
Venice 4
Villeurbanne 4
Abidjan 3
Baghdad 3
Belo Horizonte 3
Brescia 3
Bắc Ninh 3
Can Tho 3
Delhi 3
Dulles 3
Gaborone 3
Houston 3
Kampala 3
Kigali 3
Kingston 3
Lancaster 3
Totale 1.220
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Nome #
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach 404
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 293
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 212
Experimental Demonstration of Avalanche operation in lateral normally-off 100 V GaN HEMTs 203
Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications 201
Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate 188
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 156
Investigation of Wafer-Level Dynamic Properties of p-GaN HEMTs in Hard Switching Conditions 155
Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTs 108
Modeling of the gate leakage and forward gate reliability in Schottky-gate p-GaN HEMTs 98
Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination 93
Gate leakage modeling and reliability in forward gate bias of p-GaN HEMTs with Schottky-gate 82
Evidence for Avalanche and its Role in Lateral and Vertical Gallium Nitride Devices 81
Hot-Electron Degradation under Switching Accelerated Lifetime Testing (SALT) of 650 v E-Mode GaN HEMTs: A Novel Experimental Approach 16
Totale 2.290
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Categoria #
all - tutte 4.476
article - articoli 1.948
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.424
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/20232 0 0 0 0 0 0 0 0 1 0 1 0
2023/202414 0 1 3 0 1 4 2 2 0 0 1 0
2024/2025174 0 2 14 14 21 13 10 6 5 12 34 43
2025/20261.832 49 82 216 314 251 92 281 130 142 96 74 105
2026/2027268 122 118 28 0 0 0 0 0 0 0 0 0
Totale 2.290