NARDO, ARIANNA
 Distribuzione geografica
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Continente #
NA - Nord America 786
EU - Europa 146
AS - Asia 68
OC - Oceania 3
Totale 1.003
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Nazione #
US - Stati Uniti d'America 786
IT - Italia 60
CN - Cina 45
DE - Germania 20
FI - Finlandia 15
BE - Belgio 10
FR - Francia 8
GB - Regno Unito 8
NL - Olanda 8
JP - Giappone 6
IN - India 4
SE - Svezia 4
TW - Taiwan 4
UA - Ucraina 4
HK - Hong Kong 3
KR - Corea 3
AT - Austria 2
AU - Australia 2
CH - Svizzera 2
DK - Danimarca 2
TR - Turchia 2
ID - Indonesia 1
IE - Irlanda 1
NZ - Nuova Zelanda 1
PL - Polonia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 1.003
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Città #
Fairfield 148
Ashburn 76
Chandler 72
Woodbridge 63
Seattle 60
Houston 59
Cambridge 45
Wilmington 35
Beijing 28
Ann Arbor 24
San Diego 19
Medford 18
Princeton 18
Des Moines 16
Padova 15
Helsinki 14
New York 11
Guangzhou 9
Blaustein 8
Chiampo 6
Roxbury 5
Boardman 4
Bristol 4
Cagliari 4
Hsinchu 4
Kermt 4
Washington 4
Tokyo 3
Villorba 3
Zellik 3
Atlanta 2
Borås 2
Central 2
Dongguan 2
Hamburg 2
Incheon 2
Istanbul 2
Leuven 2
Los Angeles 2
Miami 2
Milan 2
Mumbai 2
Nashville 2
Nijmegen 2
Odense 2
Perth 2
Rome 2
San Jose 2
Vienna 2
Bhopal 1
Bologna 1
Brügg 1
Changsha 1
Chiswick 1
Draveil 1
Dublin 1
Ferrara 1
Fossalta di Piave 1
Fuzhou 1
Garland 1
Goyang-si 1
Hangzhou 1
Hebei 1
Heverlee 1
Jinan 1
Kanpur 1
Kiel 1
Lappeenranta 1
London 1
Nanjing 1
Pinehaven 1
Ravenna 1
Redmond 1
Redwood City 1
Roermond 1
Ronco Scrivia 1
Ružomberok 1
Sarcedo 1
Taglio di Po 1
Ube 1
Warsaw 1
Totale 852
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Nome #
Degradation physics of GaN-based lateral and vertical devices 109
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 69
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 66
Stability and degradation of isolation and surface in Ga2O3 devices 64
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 58
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements 57
Reliability of H-terminated diamond MESFETs in high power dissipation operating condition 55
Analysis of parasitic effects and reliability issues of Gallium Nitride (GaN) -based devices 54
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 54
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 52
Degradation effects and origin in H-terminated diamond MESFETs 48
Charge trapping and degradation of Ga2O3 isolation structures for power electronics 46
Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress 44
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 40
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs 37
Charge trapping in GaN Power Transistors: Challenges and Perspectives 27
Hydrogen-terminated diamond MESFETs: Operating principles, static and dynamic performance, and reliability 27
Comparison between lateral and vertical Ga2O3 isolation structures 26
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 26
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes 26
Review on the degradation of GaN-based lateral power transistors 22
Dynamic performance of wide bandgap devices 14
Time-dependent degradation of hydrogen-terminated diamond MESFETs 7
Totale 1.028
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Categoria #
all - tutte 5.069
article - articoli 3.070
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.139
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20199 0 0 0 0 0 0 0 0 0 0 5 4
2019/2020117 6 4 0 3 6 4 5 7 32 30 9 11
2020/2021303 34 11 17 16 5 0 88 42 35 18 13 24
2021/2022223 4 17 18 14 8 11 22 28 18 12 19 52
2022/2023197 38 7 10 4 27 30 2 20 34 6 8 11
2023/2024176 16 36 24 14 10 22 15 8 16 13 2 0
Totale 1.028