An analysis of hot-electron (HE) effects on the dynamic resistance ( ${dR},_{mathrm{scriptstyle ON}}$ ) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional ${dR},_{mathrm{scriptstyle ON}}$ in semi-ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results.

Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress

Modolo N.;Nardo A.;Meneghini M.;Zanoni E.;
2020

Abstract

An analysis of hot-electron (HE) effects on the dynamic resistance ( ${dR},_{mathrm{scriptstyle ON}}$ ) of AlGaN/GaN high-electron-mobility transistors (HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional ${dR},_{mathrm{scriptstyle ON}}$ in semi-ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3365246
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