CHIOCCHETTA, FRANCESCA
 Distribuzione geografica
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Continente #
NA - Nord America 911
AS - Asia 770
EU - Europa 543
AF - Africa 178
SA - Sud America 121
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 8
Totale 2.543
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Nazione #
US - Stati Uniti d'America 831
SG - Singapore 280
IT - Italia 150
CN - Cina 133
HK - Hong Kong 70
BR - Brasile 61
PL - Polonia 52
DE - Germania 44
VN - Vietnam 44
TW - Taiwan 41
FI - Finlandia 40
BJ - Benin 34
FR - Francia 33
IN - India 31
NL - Olanda 23
JP - Giappone 21
GB - Regno Unito 19
KR - Corea 16
AT - Austria 14
AR - Argentina 12
RU - Federazione Russa 12
BD - Bangladesh 11
CA - Canada 11
ES - Italia 11
SE - Svezia 11
CH - Svizzera 10
EG - Egitto 10
GR - Grecia 10
TR - Turchia 10
BE - Belgio 9
AL - Albania 8
BO - Bolivia 8
DK - Danimarca 8
MX - Messico 8
UZ - Uzbekistan 8
ZW - Zimbabwe 8
AE - Emirati Arabi Uniti 7
AO - Angola 7
DZ - Algeria 7
EC - Ecuador 7
GT - Guatemala 7
ID - Indonesia 7
PT - Portogallo 7
PY - Paraguay 7
RS - Serbia 7
ZA - Sudafrica 7
CL - Cile 6
CV - Capo Verde 6
GA - Gabon 6
JO - Giordania 6
LU - Lussemburgo 6
MG - Madagascar 6
MK - Macedonia 6
PA - Panama 6
PK - Pakistan 6
PR - Porto Rico 6
SK - Slovacchia (Repubblica Slovacca) 6
YE - Yemen 6
BB - Barbados 5
CM - Camerun 5
CO - Colombia 5
CZ - Repubblica Ceca 5
GN - Guinea 5
HN - Honduras 5
IL - Israele 5
IQ - Iraq 5
LV - Lettonia 5
MD - Moldavia 5
NA - Namibia 5
SA - Arabia Saudita 5
TJ - Tagikistan 5
UG - Uganda 5
UY - Uruguay 5
XK - ???statistics.table.value.countryCode.XK??? 5
ZM - Zambia 5
AM - Armenia 4
AZ - Azerbaigian 4
BS - Bahamas 4
CD - Congo 4
CI - Costa d'Avorio 4
CY - Cipro 4
EE - Estonia 4
GM - Gambi 4
IR - Iran 4
JM - Giamaica 4
ME - Montenegro 4
MR - Mauritania 4
MW - Malawi 4
PE - Perù 4
PS - Palestinian Territory 4
RW - Ruanda 4
TZ - Tanzania 4
AD - Andorra 3
BA - Bosnia-Erzegovina 3
BY - Bielorussia 3
BZ - Belize 3
CW - ???statistics.table.value.countryCode.CW??? 3
DO - Repubblica Dominicana 3
GE - Georgia 3
GF - Guiana Francese 3
Totale 2.421
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Città #
Singapore 153
Ashburn 152
Santa Clara 72
Fairfield 71
Padova 68
Hong Kong 64
Chandler 59
Beijing 57
Bytom 40
Cotonou 34
Houston 29
Cambridge 28
Seattle 26
Boardman 25
Munich 23
Woodbridge 23
Helsinki 20
Los Angeles 20
Wilmington 20
Ann Arbor 18
Tokyo 17
Ho Chi Minh City 16
Chicago 14
São Paulo 14
Hsinchu 13
New York 13
San Diego 13
Medford 11
Princeton 11
Turku 11
Warsaw 11
Chennai 8
Des Moines 8
Hefei 8
Lappeenranta 8
London 8
Taichung 8
Taipei 8
Buffalo 7
Delhi 7
Hanoi 7
Nijmegen 7
Amman 6
Goleta 6
Guyancourt 6
Harare 6
Libreville 6
Nuremberg 6
Tashkent 6
Vienna 6
Antananarivo 5
Belgrade 5
Bridgetown 5
Council Bluffs 5
Denver 5
Dushanbe 5
Galliate Lombardo 5
Guangzhou 5
Kampala 5
Lusaka 5
Modena 5
Montevideo 5
Washington 5
Abidjan 4
Baku 4
Bengaluru 4
Brooklyn 4
Brussels 4
Cagliari 4
Cairo 4
Charlotte 4
Chittagong 4
Conakry 4
Dar es Salaam 4
Guatemala City 4
Kigali 4
Kinshasa 4
La Paz 4
Lancy 4
Lima 4
Lisbon 4
Nouakchott 4
Padua 4
Panama City 4
Praia 4
Pristina 4
Riese Pio X 4
Salt Lake City 4
Santiago 4
Tirana 4
Turin 4
Ulju-gun 4
Accra 3
Agordo 3
Andorra la Vella 3
Ankara 3
Athens 3
Banjul 3
Bishkek 3
Chisinau 3
Totale 1.483
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Nome #
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 207
Degradation physics of GaN-based lateral and vertical devices 204
STUDY OF TRAPPING IN GALLIUM NITRIDE HEMTS FOR RF APPLICATIONS 167
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 149
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias 145
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 132
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 131
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 129
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 125
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: From interdiffusion effects to hot-electrons degradation 125
Review on the degradation of GaN-based lateral power transistors 122
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 114
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling 114
Role of Carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers 112
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 106
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs 106
Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs 102
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature 99
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse 89
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs 85
Totale 2.563
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Categoria #
all - tutte 9.342
article - articoli 2.457
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.799
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202198 0 0 0 0 0 0 24 34 10 7 7 16
2021/2022151 1 7 19 13 5 16 8 21 8 9 9 35
2022/2023185 19 4 11 1 34 27 10 15 26 3 10 25
2023/2024273 30 35 28 23 11 34 17 15 13 18 16 33
2024/2025614 7 43 24 36 73 44 17 71 34 18 113 134
2025/20261.149 139 131 278 312 247 42 0 0 0 0 0 0
Totale 2.563