CHIOCCHETTA, FRANCESCA
 Distribuzione geografica
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Continente #
NA - Nord America 445
EU - Europa 168
AS - Asia 124
SA - Sud America 2
Totale 739
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Nazione #
US - Stati Uniti d'America 443
IT - Italia 108
CN - Cina 38
TW - Taiwan 25
IN - India 20
FI - Finlandia 18
JP - Giappone 12
BD - Bangladesh 8
KR - Corea 8
NL - Olanda 8
DE - Germania 7
FR - Francia 6
GB - Regno Unito 6
HK - Hong Kong 5
SE - Svezia 5
BE - Belgio 4
SG - Singapore 4
BR - Brasile 2
DK - Danimarca 2
IL - Israele 2
PK - Pakistan 2
AT - Austria 1
CA - Canada 1
GR - Grecia 1
MX - Messico 1
PL - Polonia 1
UA - Ucraina 1
Totale 739
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Città #
Fairfield 71
Chandler 59
Padova 52
Ashburn 44
Cambridge 28
Houston 27
Beijing 26
Seattle 24
Woodbridge 23
Ann Arbor 18
Wilmington 18
Helsinki 14
San Diego 13
Medford 11
Princeton 11
Tokyo 9
Des Moines 8
Chennai 7
Hsinchu 7
Nijmegen 7
Delhi 6
New York 6
Taichung 6
Galliate Lombardo 5
Guangzhou 5
Bengaluru 4
Boardman 4
Cagliari 4
Chittagong 4
Lappeenranta 4
Taipei 4
Turin 4
Ulju-gun 4
Washington 4
Agordo 3
London 3
Ma On Shan 3
Modena 3
Patna 3
Pianello Val Tidone 3
Toulouse 3
Yangmei District 3
Brussels 2
Central 2
Dongguan 2
Goleta 2
Haifa 2
Hounslow 2
Lahore 2
Legnago 2
Leuven 2
Linköping 2
Milan 2
Mira 2
New Taipei 2
Odense 2
Roxbury 2
São Paulo 2
Touchongbu 2
Ube 2
Williston 2
Ames 1
Aprilia 1
Atlanta 1
Azzano Decimo 1
Bari 1
Calgary 1
Chiampo 1
Chicago 1
Draveil 1
Fuzhou 1
Grenoble 1
Hamburg 1
Hangzhou 1
Hsinchu County 1
Kharkiv 1
Kilburn 1
Nanjing 1
New Orleans 1
Norwalk 1
Ravenna 1
Romano d'Ezzelino 1
Taglio di Po 1
Venice 1
Vicenza 1
Villach 1
Warsaw 1
Yongin-si 1
Totale 630
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Nome #
Degradation physics of GaN-based lateral and vertical devices 109
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias 69
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 68
STUDY OF TRAPPING IN GALLIUM NITRIDE HEMTS FOR RF APPLICATIONS 68
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 54
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 46
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 43
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 40
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: From interdiffusion effects to hot-electrons degradation 39
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling 36
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs 29
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 26
Review on the degradation of GaN-based lateral power transistors 22
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs 22
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 19
Role of Carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers 18
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature 15
Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs 14
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 12
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse 7
Totale 756
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Categoria #
all - tutte 4.171
article - articoli 1.253
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.424
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202076 3 3 0 2 4 3 3 6 20 24 2 6
2020/2021115 2 6 5 3 1 0 24 34 10 7 7 16
2021/2022151 1 7 19 13 5 16 8 21 8 9 9 35
2022/2023185 19 4 11 1 34 27 10 15 26 3 10 25
2023/2024229 30 35 28 23 11 34 17 15 13 18 5 0
Totale 756