The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 h' stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed.
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons
Gao Z.;Rampazzo F.;Meneghini M.;De Santi C.;Chiocchetta F.;Marcon D.;Meneghesso G.;Zanoni E.
2020
Abstract
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 h' stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed.Pubblicazioni consigliate
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