VERZELLESI, GIOVANNI
 Distribuzione geografica
Continente #
NA - Nord America 111
EU - Europa 30
AS - Asia 9
Totale 150
Nazione #
US - Stati Uniti d'America 111
IT - Italia 23
SG - Singapore 5
FI - Finlandia 3
CN - Cina 2
FR - Francia 2
GB - Regno Unito 1
JP - Giappone 1
KR - Corea 1
SE - Svezia 1
Totale 150
Città #
Fairfield 26
Ashburn 14
Padova 11
Woodbridge 11
Wilmington 9
Turin 8
Cambridge 6
Chandler 6
Houston 5
Medford 4
Princeton 4
Ann Arbor 3
Helsinki 3
Roxbury 3
Singapore 3
Bologna 2
Saint-Martin-le-Vinoux 2
Borgonovo Val Tidone 1
Buk-gu 1
Chicago 1
Des Moines 1
Guangzhou 1
New Bedfont 1
Shanghai 1
Tokyo 1
Vicenza 1
Washington 1
Totale 130
Nome #
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 53
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 42
GaN-based power devices: Physics, reliability, and perspectives 24
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters 21
A novel test methodology for RON and VTH monitoring in GaN HEMTs during switch-mode operation 16
Totale 156
Categoria #
all - tutte 1.259
article - articoli 615
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.874


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202130 0 0 21 0 0 0 0 3 2 1 1 2
2021/202252 3 3 6 0 0 1 4 13 0 2 11 9
2022/202339 6 4 5 0 6 3 2 1 5 1 3 3
2023/202435 3 4 5 3 5 6 1 0 0 2 3 3
Totale 156