VERZELLESI, GIOVANNI

VERZELLESI, GIOVANNI  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A novel test methodology for RON and VTH monitoring in GaN HEMTs during switch-mode operation 2017 Meneghesso G.Verzellesi G.Chini A. + - - International Reliability Physics Symposium
GaN-based power devices: Physics, reliability, and perspectives 2021 Meneghini M.De Santi C.Buffolo M.Chini A.Medjdoub F.Meneghesso G.Verzellesi G.Zanoni E. + JOURNAL OF APPLIED PHYSICS - -
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters 2022 M. BuffoloN. RoccatoFrancesco PivaCarlo De SantiG. VerzellesiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 2021 Roccato N.Piva F.Santi C. D.Mukherjee K.Buffolo M.Verzellesi G.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs 2020 Meneghini M.Meneghesso G.Zanoni E.Verzellesi G. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings