The performance and reliability implications of DC-to-RF dispersion effects are addressed. The proposed physical explanations and technological counteractions are reviewed. GaAs- and GaN-based FET technologies are considered, trying to point out both similar and peculiar aspects.
DC-to-RF dispersion in GaAs and GaN based Heterostructure FETs: Performance and reliability issues
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2005
Abstract
The performance and reliability implications of DC-to-RF dispersion effects are addressed. The proposed physical explanations and technological counteractions are reviewed. GaAs- and GaN-based FET technologies are considered, trying to point out both similar and peculiar aspects.File in questo prodotto:
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