Inadequate high-electric-field reliability is, at present, the major factor still limiting the large-scale employment of GaN-based HEMTs in both RF and switching power applications. Unfortunately, the physical mechanisms underlying high-field degradation of these devices are not completely understood. The aim of this work is to provide insights about the high-field degradation mechanisms in GaN-capped AlGaN/GaN HEMTs
Study of High-Field Degradation Phenomena in GaN-capped AlGaN/GaN HEMTs
RAMPAZZO, FABIANA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2006
Abstract
Inadequate high-electric-field reliability is, at present, the major factor still limiting the large-scale employment of GaN-based HEMTs in both RF and switching power applications. Unfortunately, the physical mechanisms underlying high-field degradation of these devices are not completely understood. The aim of this work is to provide insights about the high-field degradation mechanisms in GaN-capped AlGaN/GaN HEMTsFile in questo prodotto:
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