RAMPAZZO, FABIANA

RAMPAZZO, FABIANA  

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Risultati 1 - 20 di 105 (tempo di esecuzione: 0.047 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 2002 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOCHINI, ALESSANDROBUTTARI, DARIOZANONI, ENRICO + - - -
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 2002 MENEGHESSO, GAUDENZIOLEVADA, SIMONEPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + - - -
Reliability analysis of Gan-Based LEDs for solid state illumination 2003 MENEGHESSO, GAUDENZIOLEVADA, SIMONEPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + - - -
Reliability aspects of GaN microwave devices 2003 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANACHINI, ALESSANDROZANONI, ENRICO + - - -
Current Collapse in AlGaN/GaN HEMT's analyzed by means of 2D device simulation 2003 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + - - -
Reliability analysis of GaN-Based LEDs for solid state illumination 2003 MENEGHESSO, GAUDENZIOLEVADA, SIMONEPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS, COMMUNICATIONS AND COMPUTER SCIENCES - -
RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs 2003 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs 2003 MENEGHESSO, GAUDENZIORAMPAZZO, FABIANAPIEROBON, ROBERTOZANONI, ENRICO + - - -
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 2003 MENEGHESSO, GAUDENZIOLEVADA, SIMONEPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + - - -
Instabilities and degradation in GaN-based devices 2003 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANACHINI, ALESSANDROZANONI, ENRICO + - - -
Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion 2004 PIEROBON, ROBERTORAMPAZZO, FABIANACORRADINI, LUCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs 2004 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm 2004 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Reliability aspects of GaN microwave devices 2004 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANACHINI, ALESSANDROZANONI, ENRICO + - - -
Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs 2004 MENEGHESSO, GAUDENZIOPIEROBON, ROBERTORAMPAZZO, FABIANAZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hot carrier aging degradation phenomena in GaN based MESFETs 2004 RAMPAZZO, FABIANAPIEROBON, ROBERTOPACETTA, DOMENICOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Analysis of hot carrier aging degradation in GaN MESFETs 2004 PIEROBON, ROBERTORAMPAZZO, FABIANAPACETTA, DOMENICOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 2005 SOZZA, ALBERTORAMPAZZO, FABIANATAZZOLI, AUGUSTODANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 2005 SOZZA, ALBERTORAMPAZZO, FABIANATAZZOLI, AUGUSTODANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 2005 RAMPAZZO, FABIANATAMIAZZO, GIANLUCAPIEROBON, ROBERTOMENEGHESSO, GAUDENZIO + APPLIED PHYSICS LETTERS - -