The next generation silicon detectors for future very high luminosity colliders or a possible LHC upgrade scenario will require radiation-hard detectors for fluences up to 10^(16) 1-MeV equivalent neutrons/cm^(2). These high fluences present strong constraints because long irradiation times are required at the currently available proton irradiation facilities. Energetic (58 MeV) Lithium ions present a non-ionizing energy loss higher than protons and neutrons, and could consequently be a new promising radiation source for investigating the radiation hardness of silicon detectors up to very high particle fluences. Starting from this premise, we have investigated the degradation, as measured by the leakage current density increase and depletion voltage variations in the short- and long-term characteristics, induced by 58 MeV Li ions in state-of-the-art silicon diodes processed by two different manufacturers on standard and oxygenated silicon substrates. Finally, the correlation between the radiation damage induced by 58 MeV Li ions and 27 MeV protons is discussed.

Lithium ion irradiation of standard and oxygenated silicon diodes

CANDELORI, ANDREA;BISELLO, DARIO;GIUBILATO, PIERO;RANDO, RICCARDO;
2004

Abstract

The next generation silicon detectors for future very high luminosity colliders or a possible LHC upgrade scenario will require radiation-hard detectors for fluences up to 10^(16) 1-MeV equivalent neutrons/cm^(2). These high fluences present strong constraints because long irradiation times are required at the currently available proton irradiation facilities. Energetic (58 MeV) Lithium ions present a non-ionizing energy loss higher than protons and neutrons, and could consequently be a new promising radiation source for investigating the radiation hardness of silicon detectors up to very high particle fluences. Starting from this premise, we have investigated the degradation, as measured by the leakage current density increase and depletion voltage variations in the short- and long-term characteristics, induced by 58 MeV Li ions in state-of-the-art silicon diodes processed by two different manufacturers on standard and oxygenated silicon substrates. Finally, the correlation between the radiation damage induced by 58 MeV Li ions and 27 MeV protons is discussed.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/156203
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