The different behaviour of nanocrystal memory cells in linear and subthreshold region was studied. It was found that the programming window reduces with increasing readout drain current. This peculiar behaviour derives from the presence of the discrete nanodots and it has not been observed in conventional floating gate memories.

Readout drain current dependence of programming window in nanocrystal memory cells

WRACHIEN, NICOLA;AUTIZI, ENRICO;CESTER, ANDREA;
2008

Abstract

The different behaviour of nanocrystal memory cells in linear and subthreshold region was studied. It was found that the programming window reduces with increasing readout drain current. This peculiar behaviour derives from the presence of the discrete nanodots and it has not been observed in conventional floating gate memories.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2265950
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