In this paper results obtained by current-DLTS measurement on GaN-based HEMTs are presented. It will be shown that device self-heating can significantly influence the extraction of trap ionization energy leading to a large underestimation of the latter. Ionization energies as low as 80meV and non-overlapping Arrhenius plots were obtained when device self-heating was neglected. On the other hand, when thermal effects were taken into account by correcting the measured data, an ionization energy of approximately 200meV was extracted and a reasonable overlap of the Arrhenius plots was obtained by measurement carried out at different drain-source biases.
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement
ZANON, FRANCO;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2008
Abstract
In this paper results obtained by current-DLTS measurement on GaN-based HEMTs are presented. It will be shown that device self-heating can significantly influence the extraction of trap ionization energy leading to a large underestimation of the latter. Ionization energies as low as 80meV and non-overlapping Arrhenius plots were obtained when device self-heating was neglected. On the other hand, when thermal effects were taken into account by correcting the measured data, an ionization energy of approximately 200meV was extracted and a reasonable overlap of the Arrhenius plots was obtained by measurement carried out at different drain-source biases.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
