Ohmic RF-MEMS switches have been fully characterized regarding their robustness to Electro-Static Discharge events (ESD), Total Ionizing dose (TID) radiation, and long term actuation, obtaining important guidelines to improve the reliability of such devices. These tests, although very important for a complete device qualification for spatial applications, are in fact poorly investigated in literature.

RF-MEMS Switches Reliability for Long Term Spatial Applications

TAZZOLI, AUGUSTO;PERETTI, VANNI;CELLERE, GIORGIO;MENEGHESSO, GAUDENZIO
2007

Abstract

Ohmic RF-MEMS switches have been fully characterized regarding their robustness to Electro-Static Discharge events (ESD), Total Ionizing dose (TID) radiation, and long term actuation, obtaining important guidelines to improve the reliability of such devices. These tests, although very important for a complete device qualification for spatial applications, are in fact poorly investigated in literature.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2429515
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