CELLERE, GIORGIO
CELLERE, GIORGIO
Angular dependence of heavy ion effects in Floating Gate memory arrays
2007 Cellere, Giorgio; Paccagnella, Alessandro; Visconti, A; Bonanomi, M; HARBOE SORENSEN, R; Virtanen, A.
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence
2010 Bagatin, Marta; Gerardin, Simone; Cellere, Giorgio; Paccagnella, Alessandro; Visconti, A; Beltrami, S; Bonanomi, M; HARBOE SORENSEN, R.
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?
2009 Cellere, Giorgio; Gerardin, Simone; Bagatin, Marta; Paccagnella, Alessandro; Visconti, A; Bonanomi, M; Beltrami, S; HARBOE SORENSEN, R; Virtanen, A; Roche, P.
Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories
2010 Irom, F; Nguyen, Dn; Bagatin, Marta; Cellere, Giorgio; Gerardin, Simone; Paccagnella, Alessandro
Defect in thin and ultra-thin silicon dioxides
2008 Cellere, Giorgio; Gerardin, Simone; Paccagnella, Alessandro
Depassivation of Latent Plasma Damage in n-MOSFETs
2001 Cellere, Giorgio; L., Pantisano; Paccagnella, Alessandro; M. G., Valentini
Destructive events in NAND Flash memories irradiated with heavy ions
2010 Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Cellere, Giorgio; Irom, F; Nguyen, Dn
Dosimetry method for use in treatment of brain tumor, involves determining changes in threshold value of cells which are exposed to ionizing radiation by correlating address of cell to corresponding position in two-dimensional array
2010 Bonanomi, M; Cellere, Giorgio; Paccagnella, Alessandro; Visconti, A.
ELECTRICAL DETECTION AND EQUIVALENT MODEL OF SINGLE CELL OVER GOLD MICROELECTRODE BIOCHIP USED FOR CELL STIMULATION
2009 DE TONI, Alessandro; Cellere, Giorgio; Paccagnella, Alessandro; Bandiera, L; Borgo, M; Santoni, L; Dal Maschio, M; Girardi, Stefano; Lorenzelli, L.
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays
2010 Gerardin, Simone; Bagatin, Marta; Paccagnella, Alessandro; Cellere, Giorgio; A., Visconti; M., Bonanomi; A., Hjalmarsson; A. V., Prokofiev
Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale
2010 Cellere, Giorgio; Paccagnella, Alessandro; M., Murat; J., Barak; A., Akkerman; R., Harboe Sorensen; A., Virtanen; A., Visconti; M., Bonanomi
Impact of total dose on heavy-ion upsets in floating gate arrays
2010 Gerardin, Simone; Bagatin, Marta; Paccagnella, Alessandro; Cellere, Giorgio; Visconti, A; Bonanomi, M.
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID
2010 Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Cellere, Giorgio; A., Visconti; M., Bonanomi
Influence of dielectric breakdown on MOSFET drain current
2005 Cellere, Giorgio; Paccagnella, Alessandro; Mazzocchi, A; Valentini, Mg
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions
2008 Bagatin, Marta; Gerardin, Simone; Cellere, Giorgio; Paccagnella, Alessandro; Visconti, A; Beltrami, S; HARBOE SORENSEN, R; Virtanen, A.
P2ID in a Modern CMOS Technology
2002 Cellere, G.; Valentini, M. G.; Caminati, M.; Paccagnella, Alessandro
Plasma induced damage from via etching in pMOSFETs
2002 Cellere, Giorgio; M. G., Valentini; A., Baraldo; Paccagnella, Alessandro
Potential High Resolution Dosimeters For MRT
2010 Brauer Krisch, E; Rosenfeld, A; Lerch, M; Petasecca, M; Akselrod, M; Sykora, J; Bartz, J; Ptaszkiewicz, M; Olko, P; Berg, A; Wieland, M; Doran, S; Brochard, T; Kamlowski, A; Cellere, Giorgio; Paccagnella, Alessandro; Siegbahn, Ea; Prezado, Y; Martinez Rovira, I; Bravin, A; Dusseau, L; Berkvens, P.
Radiation Effects in NAND Flash Memories
2010 Bagatin, Marta; Cellere, Giorgio; Gerardin, Simone; Paccagnella, Alessandro
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications
2009 Tazzoli, Augusto; Cellere, Giorgio; Autizi, Enrico; Peretti, Vanni; Paccagnella, Alessandro; Meneghesso, Gaudenzio