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EnglishWe measured the on-state breakdown of HEMTs in a nondestructive way using the Transmission Line Pulse technique reaching very high values of gate current density (30 mA/mm). On the basis of the experimental observations, we developed a new model for on-state breakdown of HEMTs, suitable for SPICE simulations, which is capable of predicting the breakdown curves. We have shown that a parasitic bipolar action can give rise in HEMTs to a new form of breakdown, which is accurately modeled by the SPICE equivalent circuit. The model not only predicts IG, but consistently describes ID up to breakdown levels
| Titolo: | Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs |
| Autori: | |
| Data di pubblicazione: | 2000 |
| Abstract: | We measured the on-state breakdown of HEMTs in a nondestructive way using the Transmission Line Pulse technique reaching very high values of gate current density (30 mA/mm). On the basis of the experimental observations, we developed a new model for on-state breakdown of HEMTs, suitable for SPICE simulations, which is capable of predicting the breakdown curves. We have shown that a parasitic bipolar action can give rise in HEMTs to a new form of breakdown, which is accurately modeled by the SPICE equivalent circuit. The model not only predicts IG, but consistently describes ID up to breakdown levels |
| Handle: | http://hdl.handle.net/11577/2429802 |
| ISBN: | 0780358600 |
| Appare nelle tipologie: | 04.01 - Contributo in atti di convegno |
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