BUTTARI, DARIO

BUTTARI, DARIO  

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Risultati 1 - 15 di 15 (tempo di esecuzione: 0.017 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
2.1 A/mm current density AlGaN/GaN HEMT 2003 CHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICOBUTTARI, DARIO + ELECTRONICS LETTERS - -
Characterization and reliability of InP-based HEMTs implemented with different process options 2000 MENEGHESSO, GAUDENZIOBUTTARI, DARIOCHINI, ALESSANDROZANONI, ENRICO + - - -
Current Collapse in AlGaN/GaN HEMTs 2001 CHINI, ALESSANDROBUTTARI, DARIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
DC and Pulsed measurements of on-state breakdown voltage 1999 MENEGHESSO, GAUDENZIOBUTTARI, DARIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 2002 PIEROBON, ROBERTORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOCHINI, ALESSANDROBUTTARI, DARIOZANONI, ENRICO + - - -
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 2000 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Hot Electrons and Reliability in HEMTs 1999 ZANONI, ENRICOMENEGHESSO, GAUDENZIOBUTTARI, DARIO + - - -
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 1998 MENEGHESSO, GAUDENZIOBUTTARI, DARIOZANONI, ENRICO + - - -
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 2001 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Parasitic effects and long term stability of InP-based HEMTs 2000 MENEGHESSO, GAUDENZIOBUTTARI, DARIOCHINI, ALESSANDROZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs 2000 ZANONI, ENRICOMENEGHESSO, GAUDENZIOBUTTARI, DARIO + - - -
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 2001 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 2002 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Systematic characterization of Cl<sub>2</sub> reactive ion etching for gate recessing in AlGaN/GaN HEMTs 2002 BUTTARI, DARIOCHINI, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs 1999 BUTTARI, DARIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -