The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.

Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si

DE SALVADOR, DAVIDE;BISOGNIN, GABRIELE;NAPOLITANI, ENRICO;MASTROMATTEO, MASSIMO;CARNERA, ALBERTO;
2009

Abstract

The local structure of fluorine incorporated in crystalline silicon following solid phase epitaxial regrowth was investigated by means of x-ray absorption spectroscopy at the F K-edge. We clearly demonstrate that most F is found in SiF4 molecules in the crystalline matrix. A kinetic pathway, which explains our observation and which is also able to rationalize previous results in a common and coherent framework, is proposed.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2430201
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