The performance of a 600V, 4A Silicon Carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated and compared with an ultra-fast, soft-recovery, silicon power diode (Fairchild RURD460). A substantially negligible recovery current is observed for the SiC Schottky diode with expected great advantage on EMI generation; on the other hand, the forward voltage drop is larger than that of Si diodes with not easily predictable behavior in power applications efficiency.

Characterization of Schottky SiC Diodes for Power Applications

PIEROBON, ROBERTO;BUSO, SIMONE;CITRON, MASSIMILIANO;MENEGHESSO, GAUDENZIO;SPIAZZI, GIORGIO;ZANONI, ENRICO
2001

Abstract

The performance of a 600V, 4A Silicon Carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated and compared with an ultra-fast, soft-recovery, silicon power diode (Fairchild RURD460). A substantially negligible recovery current is observed for the SiC Schottky diode with expected great advantage on EMI generation; on the other hand, the forward voltage drop is larger than that of Si diodes with not easily predictable behavior in power applications efficiency.
2001
Proceedings of HETEC 2001
HETECH2001, 11th European Heterostructure Technology Workshop
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2430223
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