A fully integrated differential low-power low-noise amplifier (LNA) for ultrawideband (UWB) systems operating in the 3–5-GHz frequency range is presented. A two-section ladder input network is exploited to achieve excellent input match in a wideband fashion and to optimize the noise performance. Prototypes fabricated in a digital 0.13-um complementary metal oxide semiconductor technology show the following performance: 9.5-dB peak power gain, 3.5-dB minimum noise figure, -6-dBm input-referred 1-dB compression point, and -0.8-dBm input-referred third-order intercept point, while drawing 11 mA from a 1.5-V supply. The realized LNA is compared with previously reported LNAs tailored for the same frequency range.

A fully integrated differential CMOS LNA for 3-5-GHz ultrawideband wireless receivers

BEVILACQUA, ANDREA;GEROSA, ANDREA;NEVIANI, ANDREA
2006

Abstract

A fully integrated differential low-power low-noise amplifier (LNA) for ultrawideband (UWB) systems operating in the 3–5-GHz frequency range is presented. A two-section ladder input network is exploited to achieve excellent input match in a wideband fashion and to optimize the noise performance. Prototypes fabricated in a digital 0.13-um complementary metal oxide semiconductor technology show the following performance: 9.5-dB peak power gain, 3.5-dB minimum noise figure, -6-dBm input-referred 1-dB compression point, and -0.8-dBm input-referred third-order intercept point, while drawing 11 mA from a 1.5-V supply. The realized LNA is compared with previously reported LNAs tailored for the same frequency range.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2432317
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