MicroElectroMechanical Systems (MEMS) devices for radio-frequency and microwave applications have re-cently received increasing attention for their ability to implement attractive devices to present and future appli-cations [1]. The presence of mechanical contact intro-duces a whole new class of reliability issues, related to both mechanical and electrical phenomena [2,3]. In this work we have investigated the dynamic response of RF-MEMS switches [5] driven in different conditions (bias and actuation time) and, for the first time to our knowl-edge, the effects of TLP-ESD events on these switches.

Resistive RF-MEMS Switches Characterization and Reliability

TAZZOLI, AUGUSTO;PERETTI, VANNI;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2005

Abstract

MicroElectroMechanical Systems (MEMS) devices for radio-frequency and microwave applications have re-cently received increasing attention for their ability to implement attractive devices to present and future appli-cations [1]. The presence of mechanical contact intro-duces a whole new class of reliability issues, related to both mechanical and electrical phenomena [2,3]. In this work we have investigated the dynamic response of RF-MEMS switches [5] driven in different conditions (bias and actuation time) and, for the first time to our knowl-edge, the effects of TLP-ESD events on these switches.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2433193
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