At the current stage of GaN technology development, AlGaN-GaN HEMTs must demonstrate adequate electrical reliability before they can massively be adopted in RF power applications. Trap generation and the consequent amplification of RF current-collapse and power-slump phenomena are, in particular, among the most deleterious effects originating from high-electricfield operation [1,2]. Trap characterization methods are, therefore, key techniques for device-degradation monitoring and reliability assessment. The aim of this work is to present results from a detailed, trap-characterization study in GaN HEMTs and to provide a consistent interpretation for the different traps detected, both in terms of localization within the device structure and of associated charge/discharge mechanism
Interpretation of Buffer-Trap Effects in AlGaN-GaN HEMTs
DANESIN, FRANCESCA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2007
Abstract
At the current stage of GaN technology development, AlGaN-GaN HEMTs must demonstrate adequate electrical reliability before they can massively be adopted in RF power applications. Trap generation and the consequent amplification of RF current-collapse and power-slump phenomena are, in particular, among the most deleterious effects originating from high-electricfield operation [1,2]. Trap characterization methods are, therefore, key techniques for device-degradation monitoring and reliability assessment. The aim of this work is to present results from a detailed, trap-characterization study in GaN HEMTs and to provide a consistent interpretation for the different traps detected, both in terms of localization within the device structure and of associated charge/discharge mechanismPubblicazioni consigliate
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