DANESIN, FRANCESCA

DANESIN, FRANCESCA  

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Risultati 1 - 20 di 26 (tempo di esecuzione: 0.049 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A review of failure modes and mechanisms of GaN-based HEMT's 2007 ZANONI, ENRICOMENEGHESSO, GAUDENZIODANESIN, FRANCESCAMENEGHINI, MATTEORAMPAZZO, FABIANATAZZOLI, AUGUSTOZANON, FRANCO + - - -
An investigation of reliability on hybrid substrates GaN-HEMTs 2008 ZANON, FRANCORONCHI, NICOLO'DANESIN, FRANCESCASTOCCO, ANTONIOMENEGHESSO, GAUDENZIO + - - -
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 2007 DANESIN, FRANCESCARAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 2006 DANESIN, FRANCESCAZANON, FRANCOGERARDIN, SIMONERAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICOPACCAGNELLA, ALESSANDRO MICROELECTRONICS RELIABILITY - -
Degradation of GaN HEMT at high drain voltages 2007 MENEGHESSO, GAUDENZIODANESIN, FRANCESCAMENEGHINI, MATTEORAMPAZZO, FABIANATAZZOLI, AUGUSTOZANON, FRANCOZANONI, ENRICO + - - -
Effects Of Surface And Buffer Traps In Passivated Algan-GaN HEMTs 2008 DANESIN, FRANCESCARAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields 2008 TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIOZANON, FRANCODANESIN, FRANCESCAZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
ESD Robustness of AlGaN/GaN HEMT Devices 2007 TAZZOLI, AUGUSTODANESIN, FRANCESCAZANONI, ENRICOMENEGHESSO, GAUDENZIO - - -
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 2005 SOZZA, ALBERTORAMPAZZO, FABIANATAZZOLI, AUGUSTODANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Failure mechanisms of GaN-based transistors in on- and off-state 2008 ZANONI, ENRICOMENEGHESSO, GAUDENZIODANESIN, FRANCESCAMENEGHINI, MATTEORAMPAZZO, FABIANATAZZOLI, AUGUSTOZANON, FRANCO + - - -
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 2009 MENEGHESSO, GAUDENZIOZANONI, ENRICODANESIN, FRANCESCAZANON, FRANCORAMPAZZO, FABIANAMARINO, FABIO ALESSIO + - - -
High power performances of GaN HEMT on SopSiC substrate 2008 ZANON, FRANCODANESIN, FRANCESCATAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 2007 TAZZOLI, AUGUSTODANESIN, FRANCESCARAMPAZZO, FABIANAZANON, FRANCOMENEGHESSO, GAUDENZIO + - - -
Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors 2006 ZANON, FRANCODANESIN, FRANCESCAGERARDIN, SIMONERAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICOPACCAGNELLA, ALESSANDRO - - 30th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2006
Interpretation of Buffer-Trap Effects in AlGaN-GaN HEMTs 2007 DANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Investigation on charge trapping phenomena leading to kink effect on AlGaN/GaN HEMTs 2007 ZANON, FRANCODANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Light emission in GaN HEMTs: a powerful characterization and reliability tool 2008 MENEGHESSO, GAUDENZIODANESIN, FRANCESCARAMPAZZO, FABIANAZANON, FRANCOTAZZOLI, AUGUSTOMENEGHINI, MATTEOZANONI, ENRICO - - -
Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing 2009 ZANONI, ENRICODANESIN, FRANCESCAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIO + IEEE ELECTRON DEVICE LETTERS - -
Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors 2008 DANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs 2008 DANESIN, FRANCESCAMARINO, FABIO ALESSIOTAZZOLI, AUGUSTOZANON, FRANCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -