The ESD sensitivity of 65-nm Fully Depleted SOI MOSFETs (with thin silicon body) used as output buffer devices is studied. A detailed electrical investigation is carried out in order to classify the observed failure modes and mechanisms. We propose a new failure criterion that allows us to univocally identify the device failure. Finally, we analyze the impact of device geometry and strain engineering on the ESD sensitivity.

Electrostatic Discharge Effects In Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques

GRIFFONI, ALESSIO;TAZZOLI, AUGUSTO;GERARDIN, SIMONE;MENEGHESSO, GAUDENZIO
2008

Abstract

The ESD sensitivity of 65-nm Fully Depleted SOI MOSFETs (with thin silicon body) used as output buffer devices is studied. A detailed electrical investigation is carried out in order to classify the observed failure modes and mechanisms. We propose a new failure criterion that allows us to univocally identify the device failure. Finally, we analyze the impact of device geometry and strain engineering on the ESD sensitivity.
ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS - 2008
9781585371464
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2434197
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