New results on the ESD sensitivity of 65-nm Fully Depleted SOI MOSFETs are presented. The role of material and structure in the response to ESD stresses was analyzed. The criterion to detect the failure condition was also investigated.

ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques

GRIFFONI, ALESSIO;TAZZOLI, AUGUSTO;GERARDIN, SIMONE;MENEGHESSO, GAUDENZIO
2008

Abstract

New results on the ESD sensitivity of 65-nm Fully Depleted SOI MOSFETs are presented. The role of material and structure in the response to ESD stresses was analyzed. The criterion to detect the failure condition was also investigated.
2nd International Electrostatic Discharge Workshop IEW 2008
1585371505
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2434317
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