ESD protection elements for 0.35mum smart power technology on SOI substrate are investigated, considering bulk technology as a reference. Heat dissipation issue, due to oxide isolation, is analyzed at simulation level. Starting from simulation results, proper sizing and ESD robustness verification are presented

Development of ESD protection structures for BULK and SOI BCD6 technology

TAZZOLI, AUGUSTO;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2006

Abstract

ESD protection elements for 0.35mum smart power technology on SOI substrate are investigated, considering bulk technology as a reference. Heat dissipation issue, due to oxide isolation, is analyzed at simulation level. Starting from simulation results, proper sizing and ESD robustness verification are presented
IEEE Proceedings of the 18th International Symposium on Power Semiconductor Devices and Integrated Circuits
0780397142
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2434386
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