We present new results on electrostatic discharges in fully depleted SOI MOSFETs struck by heavy ions. We investigate the sensitivity of irradiated MOSFETs to discharges applied both at the gate and drain terminals. A single heavy-ion strike is shown to reduce the ESD breakdown voltage and enhance the probability of generating source-drain filaments for gate ESD events, while leaving the sensitivity to drain events unchanged. Radiation-induced latent damage in the gate oxide and defects in the silicon body are pointed out as possible reasons for the modified response to electrostatic discharges after irradiation.

Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide

CESTER, ANDREA;TAZZOLI, AUGUSTO;GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO
2007

Abstract

We present new results on electrostatic discharges in fully depleted SOI MOSFETs struck by heavy ions. We investigate the sensitivity of irradiated MOSFETs to discharges applied both at the gate and drain terminals. A single heavy-ion strike is shown to reduce the ESD breakdown voltage and enhance the probability of generating source-drain filaments for gate ESD events, while leaving the sensitivity to drain events unchanged. Radiation-induced latent damage in the gate oxide and defects in the silicon body are pointed out as possible reasons for the modified response to electrostatic discharges after irradiation.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2436366
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact