We subjected organic thin film transistors with different gate dielectrics to soft-UV irradiation. Irradiation reduces the transconductance on all devices, regardless the gate dielectric employed. However, UV irradiation differently impacts on the drain current: it decreases on devices with hexamethyl-disilazane treated gate dielectric, mainly due to transconductance degradation. Conversely, negative charge trapping dominates over the transconductance degradation on devices with silicon nanoparticles leading to a drain current increase.

Effects of soft-UV irradiation on organic thin film transistors with different gate dielectrics

WRACHIEN, NICOLA;CESTER, ANDREA;MENEGHESSO, GAUDENZIO;
2010

Abstract

We subjected organic thin film transistors with different gate dielectrics to soft-UV irradiation. Irradiation reduces the transconductance on all devices, regardless the gate dielectric employed. However, UV irradiation differently impacts on the drain current: it decreases on devices with hexamethyl-disilazane treated gate dielectric, mainly due to transconductance degradation. Conversely, negative charge trapping dominates over the transconductance degradation on devices with silicon nanoparticles leading to a drain current increase.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2437895
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