The achievement reached by gallium nitride based LEDs in the last years has permitted the growth of commercial interest on these devices and gave birth to the solid state lighting technology. Light sources based on semiconductors offer many advantages respect to conventional lamps, but many reliability issues still remain object of study for further improvements [1]. Single quantum well AlGaN/InGaN/GaN blue LEDs grown on SiC and mounted in TO46 metal packages were submitted to electrical stress biasing the devices at 20mA DC (2000 hours), 50mA DC (2000 hours) and 100mA DC (500 hours). Thermal storage has also been carried out at several temperature up to 300°C.
Degradation effects in InGaN/GaN light emitting diodes
LEVADA, SIMONE;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2004
Abstract
The achievement reached by gallium nitride based LEDs in the last years has permitted the growth of commercial interest on these devices and gave birth to the solid state lighting technology. Light sources based on semiconductors offer many advantages respect to conventional lamps, but many reliability issues still remain object of study for further improvements [1]. Single quantum well AlGaN/InGaN/GaN blue LEDs grown on SiC and mounted in TO46 metal packages were submitted to electrical stress biasing the devices at 20mA DC (2000 hours), 50mA DC (2000 hours) and 100mA DC (500 hours). Thermal storage has also been carried out at several temperature up to 300°C.Pubblicazioni consigliate
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