RF-MEMS switches have potential prerogatives better than traditional solid state devices, but the presence of mechanical movement introduces new classes of reliability issues that are not found in traditional devices. In this work we have carried out an extensive electrical characterization in order to identify the dynamic response of RF-MEMS switches driven in different conditions of voltage and actuation time. Furthermore, probably due to their recent introduction to the market, the robustness of MEMS submitted to ESD stresses has been also poorly investigated. We have studied, for the first time to our knowledge, the effects of TLP-ESD events on RF-MEMS switches identifying a very critical ESD sensitivity

Reliability issues in RF-MEMS switches submitted to cycling and ESD test

TAZZOLI, AUGUSTO;PERETTI, VANNI;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2006

Abstract

RF-MEMS switches have potential prerogatives better than traditional solid state devices, but the presence of mechanical movement introduces new classes of reliability issues that are not found in traditional devices. In this work we have carried out an extensive electrical characterization in order to identify the dynamic response of RF-MEMS switches driven in different conditions of voltage and actuation time. Furthermore, probably due to their recent introduction to the market, the robustness of MEMS submitted to ESD stresses has been also poorly investigated. We have studied, for the first time to our knowledge, the effects of TLP-ESD events on RF-MEMS switches identifying a very critical ESD sensitivity
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2443380
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