B diffuses in crystalline Si by reacting with Si self-interstitial (I) with a frequency g, forming a BI complex that can migrate for an average length lambda. We experimentally measured both g and lambda as a function of the hole concentration p by means of iso-concentration experiments on B delta-layers both under p- and n-doping conditions. On the basis of these data, we propose a comprehensive model that fixes the interplay among free charge, I and BI charge states that determines the B diffusion. Pairing effect with donors was also considered. (C) 2007 Elsevier B.V. All rights reserved.
Iso-concentration study of atomistic mechanism of B diffusion in Si
DE SALVADOR, DAVIDE;NAPOLITANI, ENRICO;BISOGNIN, GABRIELE;CARNERA, ALBERTO;
2007
Abstract
B diffuses in crystalline Si by reacting with Si self-interstitial (I) with a frequency g, forming a BI complex that can migrate for an average length lambda. We experimentally measured both g and lambda as a function of the hole concentration p by means of iso-concentration experiments on B delta-layers both under p- and n-doping conditions. On the basis of these data, we propose a comprehensive model that fixes the interplay among free charge, I and BI charge states that determines the B diffusion. Pairing effect with donors was also considered. (C) 2007 Elsevier B.V. All rights reserved.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
