We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We model the effects through a statistical analysis, which considers the three-dimensional nature of these devices and overlapping ion hits. The analysis carried out in this work is based on a large amount of experimental data and on the reliability distribution functions (Poisson area scaling, Log- Normal distribution,Weibull distribution, etc.), commonly used to estimate the time and charge to breakdown for accelerated lifetime tests.

A Statistical Approach to Microdose Induced Degradation in FinFET Devices

GRIFFONI, ALESSIO;GERARDIN, SIMONE;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;
2009

Abstract

We study the variability of microdose effects induced by heavy-ion strikes on FinFETs. We model the effects through a statistical analysis, which considers the three-dimensional nature of these devices and overlapping ion hits. The analysis carried out in this work is based on a large amount of experimental data and on the reliability distribution functions (Poisson area scaling, Log- Normal distribution,Weibull distribution, etc.), commonly used to estimate the time and charge to breakdown for accelerated lifetime tests.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2445886
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